Temperature-insensitive silicon MZI with local heaters is fabricated by DUV lithography. Temperature dependence is less than 5pm/°C but the wavelength can be tuned by the local heater at the efficiency of 24mW/FSR. The results are discussed in comparison with permanent wavelength trimming by thermal annealing.
Passive and active wavelength trimming of temperature-insensitive silicon MZI
Claudio J. Oton Nieto;
2017-01-01
Abstract
Temperature-insensitive silicon MZI with local heaters is fabricated by DUV lithography. Temperature dependence is less than 5pm/°C but the wavelength can be tuned by the local heater at the efficiency of 24mW/FSR. The results are discussed in comparison with permanent wavelength trimming by thermal annealing.File in questo prodotto:
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