We report on the fabrication and characterization of a near infrared junction field effect phototransistor provided with a Germanium gate and fabricated in a silicon photonics foundry. The maximum device responsivity exceeds 36A/W with a dark current of 33μA at 2V.
Germanium gate junction-field-effect phototransistor integrated on SOI platform
Colace, L.
;Faralli, S.
;
2015-01-01
Abstract
We report on the fabrication and characterization of a near infrared junction field effect phototransistor provided with a Germanium gate and fabricated in a silicon photonics foundry. The maximum device responsivity exceeds 36A/W with a dark current of 33μA at 2V.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
