Second-harmonic generation is demonstrated in AlGaAs-on-insulator waveguides at telecom wavelengths. Using this material platform, a maximum internal normalized efficiency of 1202 55% W −1 cm −2 is achieved for a 100 fs pulsed excitation wavelength at 1560 nm. This finding is important towards enabling new chip-scale devices for sensing, metrology, and quantum optics.

Second-harmonic generation in AlGaAs-on-insulator waveguides

Sorel M.
2019-01-01

Abstract

Second-harmonic generation is demonstrated in AlGaAs-on-insulator waveguides at telecom wavelengths. Using this material platform, a maximum internal normalized efficiency of 1202 55% W −1 cm −2 is achieved for a 100 fs pulsed excitation wavelength at 1560 nm. This finding is important towards enabling new chip-scale devices for sensing, metrology, and quantum optics.
2019
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11382/531929
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 31
social impact