We report on the design and experimental evaluation of AlGaInAs/InP multiquantum well epistructures for modelocked emission at 1.5 μm. We show that mode-locked lasers fabricated on an optimized three quantum well active region with a low optical confinement factor deliver pulses with increased peak power and stability over a much wider biasing range than those fabricated using a standard five quantum well design. Sonogram measurements indicate that sub-ps symmetrical pulses with a substantially reduced linear blue chirp are generated up to nearly three times the laser current threshold.
High-power and low-noise mode-locking operation of al-quaternary laser diodes
Sorel M.
2015-01-01
Abstract
We report on the design and experimental evaluation of AlGaInAs/InP multiquantum well epistructures for modelocked emission at 1.5 μm. We show that mode-locked lasers fabricated on an optimized three quantum well active region with a low optical confinement factor deliver pulses with increased peak power and stability over a much wider biasing range than those fabricated using a standard five quantum well design. Sonogram measurements indicate that sub-ps symmetrical pulses with a substantially reduced linear blue chirp are generated up to nearly three times the laser current threshold.File in questo prodotto:
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