We present results from 400G transceiver development based on the hybrid integration of vertical-cavity surface emitting lasers and photodiode arrays on 3 and 12 μm silicon-on-insulator (SOI) chips. The integration of waveguide circuits, amplifiers and modulators on SOI is also reported.
Transceivers for 400G based on Hybrid Integrated Thick SOI and III/V Chips
Malacarne A.;
2017-01-01
Abstract
We present results from 400G transceiver development based on the hybrid integration of vertical-cavity surface emitting lasers and photodiode arrays on 3 and 12 μm silicon-on-insulator (SOI) chips. The integration of waveguide circuits, amplifiers and modulators on SOI is also reported.File in questo prodotto:
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