A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at a wavelength of 780.24 nm with up to 60 mW power. A mode expander and aluminum-free active layers have been used to reduce the linewidth to 612 kHz while maintaining high output power. The laser demonstrates over 40 dB side-mode suppression ratio with >0.3 nm of tuning suitable for atom cooling experiments with the D2 87Rb atomic transition. This laser has substantial potential to be integrated into miniaturized cold atom systems.
Sub-megahertz linewidth 780.24 nm distributed feedback laser for 87Rb applications
Sorel M.;
2020-01-01
Abstract
A distributed feedback GaAs-based semiconductor laser with a laterally coupled grating is demonstrated at a wavelength of 780.24 nm with up to 60 mW power. A mode expander and aluminum-free active layers have been used to reduce the linewidth to 612 kHz while maintaining high output power. The laser demonstrates over 40 dB side-mode suppression ratio with >0.3 nm of tuning suitable for atom cooling experiments with the D2 87Rb atomic transition. This laser has substantial potential to be integrated into miniaturized cold atom systems.File in questo prodotto:
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