Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process. © 2008 American Institute of Physics.
|Titolo:||Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters|
|Data di pubblicazione:||2008|
|Appare nelle tipologie:||1.1 Articolo su Rivista/Article|