After electrochemical etching, we have made a study of the effects generated on p +-type porous silicon layers when they are left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we have monitored the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of photoluminescence and transmission electron microscopy measurements for different post-etching times. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structural and light-emission modification in chemically-etched porous silicon

OTON NIETO, CLAUDIO JOSE;
2005

Abstract

After electrochemical etching, we have made a study of the effects generated on p +-type porous silicon layers when they are left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we have monitored the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of photoluminescence and transmission electron microscopy measurements for different post-etching times. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11382/511011
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