The effect of NO2 on porous silicon to increase the free hole density and to pull them toward the surface was discussed. It was found that the latter effect was an effective narrowing of the conductive cross-sections. The latter effect dominated in thin sensors, as the free hole density is high even in the absence of NO2. The result show that in thick sensors, the dominating effect is the increase in free hole density, thus the net effect of NO2 in thick and thin porous silicon sensors is opposite in sign.
|Titolo:||Opposite effects of NO2 on electrical injection in porous silicon gas sensors|
|Autori interni:||OTON NIETO, CLAUDIO JOSE|
|Data di pubblicazione:||2004|
|Rivista:||APPLIED PHYSICS LETTERS|
|Appare nelle tipologie:||1.1 Articolo su Rivista/Article|