We describe the fabrication and characterization of a silicon waveguide resonant photodetector compatible with the optical-to-electrical conversion of wavelengths at, or around, 1550 nm. Sub-band responsivity is provided through the introduction of defects via inert self-implantation and subsequent annealing. The detector is located within a 20-Î¼m radius silicon microring resonator. An 18-dB resonant enhancement in absorption coefficient and 12-dB enhancement in photocurrent were measured, leading to a resonant responsivity of approximately 39 mA/W at 20-V reverse bias. Â© 2006 IEEE.
|Titolo:||Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55 Î¼m|
|Data di pubblicazione:||2010|
|Appare nelle tipologie:||1.1 Articolo su Rivista/Article|