We report on the application of defect-enhanced silicon waveguide photodiodes operating at 1550 nm as power monitors for use in photonic integrated circuits. In-line monitors of 250-μm length provide an efficiency of 97 mA/W by absorbing only 8% of the optical mode. The monitors were integrated onto micro-ring waveguide ports to provide measures of optical resonance characteristics and a feedback to a thermal resonance tuner. The suitability of these photodetectors for control of micro-ring resonators is demonstrated. © 2006 IEEE.

Monitoring and tuning micro-ring properties using defect-enhanced silicon photodiodes at 1550 nm

VELHA, PHILIPPE;
2012-01-01

Abstract

We report on the application of defect-enhanced silicon waveguide photodiodes operating at 1550 nm as power monitors for use in photonic integrated circuits. In-line monitors of 250-μm length provide an efficiency of 97 mA/W by absorbing only 8% of the optical mode. The monitors were integrated onto micro-ring waveguide ports to provide measures of optical resonance characteristics and a feedback to a thermal resonance tuner. The suitability of these photodetectors for control of micro-ring resonators is demonstrated. © 2006 IEEE.
2012
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11382/516866
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