Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 Î¼m and 1.8 Î¼m, which correspond to recombination between the direct and indirect transitions, respectively. The emission wavelength can be tuned by around 4% through changing the current density through the device. The devices have potential applications in the fields of optical interconnects, gas sensing, and healthcare. Â© 2012 American Institute of Physics.
|Titolo:||1.55 Î¼m direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates|
|Data di pubblicazione:||2012|
|Appare nelle tipologie:||1.1 Articolo su Rivista/Article|