This chapter is concerned with the design, fabrication, and characterization of deeply-etched III-V semiconductor ring lasers (SRL) whose radius is scaled down to sub-10μm values. The laser threshold performances are experimentally investigated for different laser geometries. Compact racetrack-shape SRLs are shown to exhibit robust unidirectional bistable operation with direct extinction ratio and single mode rejection ratio of 20 and 30 dB, respectively.
Semiconductor Micro-Ring Lasers
Sorel M.
2014-01-01
Abstract
This chapter is concerned with the design, fabrication, and characterization of deeply-etched III-V semiconductor ring lasers (SRL) whose radius is scaled down to sub-10μm values. The laser threshold performances are experimentally investigated for different laser geometries. Compact racetrack-shape SRLs are shown to exhibit robust unidirectional bistable operation with direct extinction ratio and single mode rejection ratio of 20 and 30 dB, respectively.File in questo prodotto:
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