We propose a procedure for characterizing fabrication deviations within a chip and among different chips in a wafer in silicon photonics technology. In particular, independent measurements of SOI thickness and waveguide width deviations can be mapped through the wafer, allowing a precise and non-destructive characterization of how these variations are distributed along the surface of the wafer. These deviations are critical for most wavelength-dependent integrated devices, like microring resonators, filters, etc. We also show that the technique allows for the characterization of proximity effects.
|Titolo:||Silicon photonic waveguide metrology using Mach-Zehnder interferometers|
|Data di pubblicazione:||2016|
|Appare nelle tipologie:||1.1 Articolo su Rivista/Article|