We have studied the properties of p+-type doped porous silicon, formed by electrochemical etching, when is left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we monitored the formation of the porous silicon layer during the electrochemical treatment as well as the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of the photoluminescence modification for different post-etching times.
|Titolo:||Chemical etching effects in porous silicon layers|
|Data di pubblicazione:||2003|
|Appare nelle tipologie:||4.1 Contributo Atti Congressi/Articoli in extenso|