Nanobeam cavities based on Silicon-On-Insulator (SOI) working at telecommunication wavelengths (1550 nm) provide an ideal platform to use for label free sensing due to their features of high Qs, high sensitivity and capability for CMOS integration. We present some recent results showing the design modeling, fabrication, and experimental measurement of optical nanobeam cavities that work in air and show their sensitivity to the protein BSA.

Progress in high Q optical nanobeam cavities for label-free sensing

VELHA, PHILIPPE;
2015-01-01

Abstract

Nanobeam cavities based on Silicon-On-Insulator (SOI) working at telecommunication wavelengths (1550 nm) provide an ideal platform to use for label free sensing due to their features of high Qs, high sensitivity and capability for CMOS integration. We present some recent results showing the design modeling, fabrication, and experimental measurement of optical nanobeam cavities that work in air and show their sensitivity to the protein BSA.
2015
9781467378802
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11382/514872
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