The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 Î¼m of a few Î¼W, many orders of magnitude larger than the Î¼W previously reported. Three individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photodetectors above 1.6Î¼m on Si with applications for lab-on-a-chip and healthcare. Â© The Electrochemical Society.
|Titolo:||Direct band-gap electroluminescence from strained n-Ge light emitting diodes|
|Data di pubblicazione:||2012|
|Appare nelle tipologie:||4.1 Contributo Atti Congressi/Articoli in extenso|