We report the fabrication and characterization of a 29 mA/W sensitivity integrated silicon microring photodetector at 1550 nm. It is formed of a lateral p-i-n junction with defects incorporation via high energy ion implantation.
High Sensitivity Defect-Enhanced Silicon Ring-Resonator Photodetectors at Telecom Wavelengths
VELHA, PHILIPPE;
2010-01-01
Abstract
We report the fabrication and characterization of a 29 mA/W sensitivity integrated silicon microring photodetector at 1550 nm. It is formed of a lateral p-i-n junction with defects incorporation via high energy ion implantation.File in questo prodotto:
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