The design, modeling, fabrication, and experimental measurements on optical nanobeam cavities that change resonant frequency in response to changes in the refractive index of the surrounding environment are presented. Nanobeam cavities based on Silicon-On-Insulator (SOI) that work at telecommunication wavelengths (1550 nm) provide an ideal platform for label-free sensing, due to their features of high resonance Q-factors, high sensitivity and capability for integration with silicon CMOS. © 2013 SPIE.

High-Q optical nanobeam cavities for label-free sensing

VELHA, PHILIPPE;
2013-01-01

Abstract

The design, modeling, fabrication, and experimental measurements on optical nanobeam cavities that change resonant frequency in response to changes in the refractive index of the surrounding environment are presented. Nanobeam cavities based on Silicon-On-Insulator (SOI) that work at telecommunication wavelengths (1550 nm) provide an ideal platform for label-free sensing, due to their features of high resonance Q-factors, high sensitivity and capability for integration with silicon CMOS. © 2013 SPIE.
2013
9780819495761
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11382/516890
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