The photoluminescence of tensile strain germanium nanostructures has been studied. Stress is applied by depositing Silicon nitrides on top of Germanium. This novel technique enable the control of the optical properties of the material.
Process induced strain bangap reduction in Germanium nanostructures
VELHA, PHILIPPE;
2012-01-01
Abstract
The photoluminescence of tensile strain germanium nanostructures has been studied. Stress is applied by depositing Silicon nitrides on top of Germanium. This novel technique enable the control of the optical properties of the material.File in questo prodotto:
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