A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 ± 0.4) x 10-7 Ω-cm2, with a low transfer length of (0.95 0.12) for deposited Ni and Ge annealed at 340 oC for 30 s on n-Ge with a doping density of 3 x 1019 cm -3. © The Electrochemical Society.
Low specific ohmic contacts to n-type germanium using a low temperature NiGe process
VELHA, PHILIPPE;
2012-01-01
Abstract
A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 ± 0.4) x 10-7 Ω-cm2, with a low transfer length of (0.95 0.12) for deposited Ni and Ge annealed at 340 oC for 30 s on n-Ge with a doping density of 3 x 1019 cm -3. © The Electrochemical Society.File in questo prodotto:
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