The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron gratings and pillars were fabricated before being embedded in strained silicon nitride films. Using different deposition conditions and different sizes of structures, the stress in the nanostructures can be controlled. The measured optical properties of the samples show that the direct band-gap is shifted drastically towards higher wavelength to over 1.9 Î¼m wavelength. This process of local control of the stress in germanium nanostructures is compatible with integrated photonic devices in waveguides geometry. This work opens the route towards emitters and photo-detectors above 1.6 Î¼m wavelength integrated on silicon substrates which are not presently available. Â© The Electrochemical Society.
|Titolo:||Long wavelength >1.9 Î¼m Germanium for optoelectronics using process induced strain|
|Data di pubblicazione:||2012|
|Appare nelle tipologie:||4.1 Contributo Atti Congressi/Articoli in extenso|