The photoluminescence of process-induced tensile strained nanostructures fabricated using Ge on Si is reported. 100 nm pillars were etched and embedded in a silicon nitride thin film demonstrating photoluminescence emission up to â¼2.5 μm. © 2013 IEEE.
Strained germanium nanostructures on silicon emitting at >2.2 um wavelength
VELHA, PHILIPPE;
2013-01-01
Abstract
The photoluminescence of process-induced tensile strained nanostructures fabricated using Ge on Si is reported. 100 nm pillars were etched and embedded in a silicon nitride thin film demonstrating photoluminescence emission up to â¼2.5 μm. © 2013 IEEE.File in questo prodotto:
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