We report on the fabrication and characterization of a novel near infrared phototransistor provided with a Germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.
Germanium gate phototransistor fabricated on SOI platform
COLACE, Lorenzo;Faralli, S.
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2015-01-01
Abstract
We report on the fabrication and characterization of a novel near infrared phototransistor provided with a Germanium optical gate and fabricated by means of a commercially available silicon photonics foundry.File in questo prodotto:
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