Indium-Phosphide (InP) is one of the most common materials used for realizing active devices working in the millimeter frequency range. The isotropic etching profile of InP substrates limits the realization of passive devices, thus requiring an expensive and lossy hybrid platform. This paper presents a via-less, cost-effective and efficient solution for InP substrate. By using the proposed planar solution, it is demonstrated that rectangular waveguides can be realized on InP by fabricating a bed of nails structure which acts as a reflecting boundary for an impinging millimeter wave. As a proof of concept, a transition from microstrip to rectangular waveguide structure is realized within H-band (220-320 GHz) with a return loss of -18dB over a bandwidth of 30 GHz.
|Titolo:||Via-Less Microstrip to Rectangular Waveguide Transition on InP|
|Data di pubblicazione:||2019|
|Appare nelle tipologie:||4.1 Contributo Atti Congressi/Articoli in extenso|